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this is information on a product in full production. march 2014 docid024370 rev 4 1/17 17 STGW40H60DLFB, stgwt40h60dlfb trench gate field-stop igbt, hb series 600 v, 40 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? low saturation voltage: v ce(sat) = 1.6 v (typ.) @ i c = 40 a ? tight parameters distribution ? safe paralleling ? low thermal resistance ? low v f soft recovery co-packaged diode ? lead free package applications ? induction heating ? microwave oven ? resonant converters description this device is an igbt developed using an advanced proprietary trench gate field stop structure. the device is part of the new hb series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 to-3p 1 2 3 1 2 3 tab c (2 or tab) g (1) e (3) table 1. device summary order code marking package packaging STGW40H60DLFB gw40h60dlfb to-247 tube stgwt40h60dlfb gwt40h60dlfb to-3p tube www.st.com
contents STGW40H60DLFB, stgwt40h60dlfb 2/17 docid024370 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 to-247, STGW40H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 to-3p, stgwt40h60dlfb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid024370 rev 4 3/17 STGW40H60DLFB, stgwt40h60dlfb electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 80 a i c continuous collector current at t c = 100 c 40 a i cp (1) 1. pulse width limited by ma ximum junction temperature pulsed collector current 160 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 80 a i f continuous forward current at t c = 100 c 40 a i fp (1) pulsed forward current 160 a p tot total dissipation at t c = 25 c 283 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.53 c/w r thjc thermal resistance junction-case diode 1.47 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics STGW40H60DLFB, stgwt40h60dlfb 4/17 docid024370 rev 4 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 40 a 1.6 2 v v ge = 15 v, i c = 40 a t j = 125 c 1.7 v ge = 15 v, i c = 40 a t j = 175 c 1.8 v f forward on-voltage i f = 40 a 1.55 1.8 v i f = 40 a t j = 125 c 1.3 i f = 40 a t j = 175 c 1.25 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 600 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -5412- pf c oes output capacitance - 198 - pf c res reverse transfer capacitance -107-pf q g total gate charge v cc = 480 v, i c = 40 a, v ge = 15 v, see figure 27 -210-nc q ge gate-emitter charge - 39 - nc q gc gate-collector charge - 82 - nc
docid024370 rev 4 5/17 STGW40H60DLFB, stgwt40h60dlfb electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(off) turn-off delay time v ce = 400 v, i c = 40 a, r g = 10 , v ge = 15 v, see figure 25 142 ns t f current fall time - 27.6 - ns e off (1) 1. turn-off losses include also the tail of the collector current. turn-off switching losses - 363 - j t d(off) turn-off delay time v ce = 400 v, i c = 40 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 25 141 ns t f current fall time - 61 - ns e off (1) turn-off switching losses - 764 - j table 7. igbt switching characteristics (capacitive load) symbol parameter test conditions min. typ. max. unit e off (1) 1. turn-off losses include also the tail of the collector current. turn-off switching losses v cc = 320 v, r g = 10 , i c = 40 a, l = 100 h, c snub = 20 nf, see figure 26 -190- j v cc = 320 v, r g = 10 , i c = 40 a, l = 100 h, c snub = 20 nf, t j = 175 c, see figure 26 -290-
electrical characteristics STGW40H60DLFB, stgwt40h60dlfb 6/17 docid024370 rev 4 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature figure 4. output characteristics (t j = 25c) figure 5. output characteristics (t j = 175c) p tot 150 100 50 0 025 t c ( c ) (w) 100 200 50 75 250 175 125 150 gipd011020131205fsr i c 30 20 10 0 025 t c ( c ) (a) 100 40 50 75 50 60 70 175 v ge 15v, t j 175 c 125 150 80 gipd011020131155fsr i c 60 40 20 0 0 1 v ce (v) (a) 4 80 2 3 100 v ge =15v 120 140 9v 11v gipd011020131123fsr i c 60 40 20 0 0 1 v ce (v) (a) 4 80 2 3 100 v ge =15v 120 140 7v 11v 9v gipd011020131135fsr figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current v ce(sat) 1.8 1.6 1.4 1.2 -50 t j ( c ) (v) 100 2 050 2.2 150 2.4 2.6 v ge = 15v i c = 80a i c = 40a i c = 20a gipd011020131319fsr v ce(sat) 1.6 1.4 1.2 1.0 0 i c ( a ) (v) 60 1.8 20 40 2 80 2.2 2.4 v ge = 15v t j = -40 c t j = 25 c t j = 175 c gipd011020131325fsr
docid024370 rev 4 7/17 STGW40H60DLFB, stgwt40h60dlfb electrical characteristics figure 8. collector current vs. switching frequency figure 9. forward bias safe operating area i c 60 40 20 0 1 f( khz ) (a) 80 10 100 rectangular current shape (duty cycle= 0.5, v cc = 400v, r g =4.7, v ge = 0/15 v, t j = 175 c) t c = 80c t c = 100c gipd011020131340fsr i c 100 10 1 0.1 1 v ce ( v ) (a) 10 10 s 100 s 1 ms single pulse tc= 25c, t j <= 175c v ge = 15v 100 gipd011020131351fsr figure 10. transfer characteristics figure 11. diode v f vs. forward current i c 60 40 20 0 6 7 v ge (v) (a) 10 80 8 9 100 t j =175c 120 140 -40c 25c v ce =5v gipd011020131146fsr v f 2.1 1.7 1.3 0.9 20 i f ( a ) (v) 30 t j = 175c 40 50 60 70 t j = 25c t j = -40c gipd011020131402fsr figure 12. normalized v ge(th) vs junction temperature figure 13. normalized v (br)ces vs. junction temperature v ge(th) 1.1 1.0 0.6 -50 t j ( c ) (norm) 0 50 100 150 i c = 2ma v ce = v ge 0.7 0.8 0.9 gipd011020131418fsr v (br)ces 1.1 1.0 0.9 -50 t j ( c ) (norm) 0 50 100 150 i c = 2ma gipd011020131412fsr
electrical characteristics STGW40H60DLFB, stgwt40h60dlfb 8/17 docid024370 rev 4 figure 14. capacitance variation figure 15. gate charge vs. gate-emitter voltage c 10 v ce (v) (pf) 0.1 1 10 c iss 100 1000 10000 c oes c res gipd011020131431fsr v ge 16 8 0 q g (n c ) (v) 0 50 100 150 i c = 40a i ge = 1ma v cc = 520v 2 4 6 200 10 12 14 gipd011020131424fsr figure 16. switching-off loss vs collector current figure 17. switching-off loss vs gate resistance e 0 i c (a) (j) 02040 200 400 600 60 80 800 1000 e off 1200 1400 1600 1800 v cc = 400v, v ge = 15v, r g = 10, t j = 175c gipd011020131448fsr e 600 r g () (j) 2610 700 800 900 14 18 22 1000 1100 e off v cc = 400 v, v ge = 15 v, i c = 40 a, t j = 175 c gipd011020131439fsr figure 18. switching-off loss vs temperature figure 19. switching-off loss vs collector- emitter voltage e 100 t j ( c ) (j) -50 0 50 300 500 700 100 150 e off v cc = 400v, v ge = 15v, r g = 10, i c = 40a gipd011020131454fsr e 200 v ce ( v ) (j) 150 250 350 400 600 800 450 e off t j = 175c, v ge = 15v, r g = 10, i c = 40a gipd011020131503fsr
docid024370 rev 4 9/17 STGW40H60DLFB, stgwt40h60dlfb electrical characteristics figure 20. switching times vs. collector current figure 21. switching times vs. gate resistance t 10 i c ( a ) (ns) 10 30 50 100 70 t f t j = 175c, v ge = 15v, r g = 10, v cc = 400v t doff gipd011020131517fsr t 10 r g ( ) (ns) 2610 100 14 t f t j = 175c, v ge = 15v, i c = 40a, v cc = 400v t doff 18 22 gipd011020131523fsr figure 22. switching-off losses vs. capacitive load e 50 c snub ( nf ) (j) 02040 150 60 l snub = 0.1mh, v ge = 15v, v cc = 320v, i c = 40a, r g = 10 t j = 175c 80 250 350 450 t j = 25c gipd071020131330fsr
electrical characteristics STGW40H60DLFB, stgwt40h60dlfb 10/17 docid024370 rev 4 figure 23. thermal impedance for igbt figure 24. thermal impedance for diode 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zthto2t_b
docid024370 rev 4 11/17 STGW40H60DLFB, stgwt40h60dlfb test circuits 3 test circuits figure 25. test circuit for inductive load switching figure 26. test circuit for capacitive load switching figure 27. gate charge test circuit figure 28. switching waveform figure 29. diode recovery time waveform am01504v1 am17096v1 csnub am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data STGW40H60DLFB, stgwt40h60dlfb 12/17 docid024370 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. 4.1 to-247, STGW40H60DLFB table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid024370 rev 4 13/17 STGW40H60DLFB, stgwt40h60dlfb package mechanical data figure 30. to-247 drawing 0075325_g
package mechanical data STGW40H60DLFB, stgwt40h60dlfb 14/17 docid024370 rev 4 4.2 to-3p, stgwt40h60dlfb table 9. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
docid024370 rev 4 15/17 STGW40H60DLFB, stgwt40h60dlfb package mechanical data figure 31. to-3p drawing 8045950_a
revision history STGW40H60DLFB, stgwt40h60dlfb 16/17 docid024370 rev 4 5 revision history table 10. document revision history date revision changes 12-mar-2013 1 initial release. 07-oct-2013 2 document status changed from preliminary to production data. added section 2.1: electrical characteristics (curves) . minor text changes. 13-mar-2014 3 updated title and description in cover page. 18-mar-2014 4 updated title in cover page and section 4: package mechanical data .
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